Single phase fluid imprint lithography method
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United States of America Patent
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Jul 3, 2012
Grant Date -
Jun 19, 2008
app pub date -
Feb 5, 2008
filing date -
Oct 2, 2003
priority date (Note) -
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Abstract
The present invention is directed toward a method for reducing pattern distortions in imprinting layers by reducing gas pockets present in a layer of viscous liquid deposited on a substrate. To that end, the method includes varying a transport of the gases disposed proximate to the viscous liquid. Specifically, the atmosphere proximate to the substrate wherein a pattern is to be recorded is saturated with gases that are either highly soluble, highly diffusive, or both with respect to either the viscous liquid, the substrate, the template, or a combination thereof. Additionally, or in lieu of saturating the atmosphere, the pressure of the atmosphere may be reduced.
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