Method for the removal of doped surface layers on the back faces of crystalline silicon solar wafers
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United States of America Patent
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Jul 3, 2012
Grant Date -
Dec 11, 2008
app pub date -
Jun 14, 2006
filing date -
Jun 17, 2005
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Abstract
The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.
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