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Abstract

A semiconductor method includes providing a silicon semiconductor substrate. A gate and a plurality of source/drain regions are formed on the silicon semiconductor substrate to form at least one pFET. A silicon-germanium layer is formed over the plurality of source/drain regions. The germanium is condensed from the silicon-germanium layer to form a plurality of source/drains in the plurality of source/drain regions by forming an oxide layer over the silicon-germanium layer. An interlevel dielectric layer is formed over the gate and the source/drain regions. A plurality of contacts is formed in the interlevel dielectric layer to the gate and the plurality of source/drain regions.

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First Claim