
US Patent No: 8,212,546
Number of patents in Portfolio can not be more than 2000
Wideband CMOS RMS power detection scheme
Stats
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Jul 3, 2012
Issued date -
Mar 19, 2009
filing date -
12/407,506
serial no -
In Force
status
Importance
Abstract
A system includes a first circuit and a second circuit. The first circuit includes a first MOS transistor having a gate and a drain. The first circuit is configured to receive a radio frequency (RF) signal at the gate of the first MOS transistor. The drain of the first MOS transistor is configured to output a first current that is proportional to the square of the input voltage of the RF signal while receiving the RF signal. The second circuit includes a second MOS transistor having a source configured to receive a first current from the first circuit. The second MOS transistor is biased in a triode region and has a channel resistance between the source and a drain. The second circuit is configured to output a voltage proportional to the value of the power of the RF signal received by the first circuit.
First Claim
Related Publications
International Classification(s)
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- [Patents Count]
Cited Art
| Patent Info | (Count) | # Cites | Year |
|---|---|---|---|
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| 7,612,588 Power on detection circuit | 6 | 2008 | |
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| 6,472,912 Device for power supply detection and power on reset | 13 | 2001 | |
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| 7,395,036 Semiconductor integrated circuit for high frequency power amplifier and electric components with the semiconductor integrated circuit | 4 | 2005 | |
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| 2011/0102,047 Radio Frequency (RF) Power Detector Suitable for Use in Automatic Gain Control (AGC) | 2 | 2009 | |
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| 2011/0062,996 POWER ON DETECTION CIRCUIT | 1 | 2010 | |
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