US Patent No: 8,212,546

Number of patents in Portfolio can not be more than 2000

Wideband CMOS RMS power detection scheme

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ALSO PUBLISHED AS: 20090237068
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Abstract

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A system includes a first circuit and a second circuit. The first circuit includes a first MOS transistor having a gate and a drain. The first circuit is configured to receive a radio frequency (RF) signal at the gate of the first MOS transistor. The drain of the first MOS transistor is configured to output a first current that is proportional to the square of the input voltage of the RF signal while receiving the RF signal. The second circuit includes a second MOS transistor having a source configured to receive a first current from the first circuit. The second MOS transistor is biased in a triode region and has a channel resistance between the source and a drain. The second circuit is configured to output a voltage proportional to the value of the power of the RF signal received by the first circuit.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
ENTROPIC COMMUNICATIONS, INC.SAN DIEGO, CA547

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Vora, Sameer - 3 1

Cited Art Landscape

Patent Info (Count) # Cites Year
 
FREESCALE SEMICONDUCTOR, INC. (1)
7,612,588 Power on detection circuit 6 2008
 
GLOBALFOUNDRIES INC. (1)
6,472,912 Device for power supply detection and power on reset 13 2001
 
MURATA MANUFACTURING CO., LTD. (1)
7,395,036 Semiconductor integrated circuit for high frequency power amplifier and electric components with the semiconductor integrated circuit 4 2005
 
SILICON LABORATORIES INC. (1)
2011/0102,047 Radio Frequency (RF) Power Detector Suitable for Use in Automatic Gain Control (AGC) 2 2009
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
2011/0062,996 POWER ON DETECTION CIRCUIT 2 2010

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