High-frequency VLSI interconnect and intentional inductor impedance extraction in the presence of a multi-layer conductive substrate

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United States of America Patent

PATENT NO 8214788
APP PUB NO 20090228847A1
SERIAL NO

12400672

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Abstract

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Embodiments of methods, apparatus, and systems for extracting impedance for a circuit design are disclosed herein. Some of the disclosed embodiments are computationally efficient and can accurately compute the frequency-dependent impedance of VLSI interconnects and/or intentional inductors in the presence of multi-layer conductive substrates. In certain embodiments, the resulting accuracy and CPU time reduction are a result of a Green's function approach with the correct quasi-static limit, a modified discrete complex image approximation to the Green's function, and a continuous dipole expansion to evaluate the magnetic vector potential at the distances relevant to VLSI interconnects and intentional inductors.

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Patent Owner(s)

Patent OwnerAddress
SIEMENS INDUSTRY SOFTWARE INC5800 GRANITE PARKWAY SUITE 600 PLANO TX 75024-6612

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Suaya, Roberto Meylan, FR 22 366

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