A halftone mask increasing the versatility of an etching stopper layer. The half tone mask (10) is provided with a transparent portion (TA) using a glass substrate (S), a first semi-transparent portion (HA) including a first semi-transparent layer (11) formed on the glass substrate, and a light shield portion (PA) including a first semi-transparent portion, a light shield layer (13) superimposed above the first semi-transparent layer, and an etching stopper layer (12) formed between the first semi-transparent layer and the light shield layer. The first semi-transparent layer and the light shield layer are each formed from Cr or at least one selected from the group consisting of an oxide, nitride, carbide, oxynitride, oxycarbide, carbonitride, and oxycarbonitride of Cr. The etching stopper layer includes a first element of at least one selected from the group consisting of Fe, Ni, and Co and a second element of at least one selected from the group consisting of Al, Si, Ti, Nb, Ta, Hf, and Zr.
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