Photosensitive semiconductor component

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8217483
APP PUB NO 20100133639A1
SERIAL NO

12624632

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Abstract

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A semiconductor component that includes a photosensitive doped semiconductor layer, in which electrical charge carriers are released during absorption of electromagnetic radiation is disclosed. The photosensitive semiconductor layer has a structured interface and at least one layer which generates an electric field for separating the released charge carriers disposed downstream of the structured interface. The electric field extends over the structured interface. The photosensitive semiconductor component is distinguished by a high efficiency of the charge carrier separation, in particular, for generating an electric current.

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Patent Owner(s)

Patent OwnerAddress
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E VMUNICH
FRIEDRICH-SCHILLER-UNIVERSITAET JENAFÜRSTENGRABEN 1 JENA 07743

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fuechsel, Kevin Jena, DE 2 11
Kley, Ernst-Bernhard Jena, DE 9 111
Tuennermann, Andreas Weimar, DE 22 143

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