Eliminate release etch attack by interface modification in sacrificial layers

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United States of America Patent

PATENT NO 8222066
APP PUB NO 20080311690A1
SERIAL NO

12061592

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Abstract

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Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.

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Patent Owner(s)

Patent OwnerAddress
SNAPTRACK INC5775 MOREHOUSE DR SAN DIEGO CA 92121

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiang, Chih-Wei Hsin-Chu, TW 25 346
Gousev, Evgeni Saratoga, US 56 758
Heald, David Solvang, US 17 459
Luo, Qi San Jose, US 104 1162
Tu, Thanh Nghia San Jose, US 3 14
Yang, Chia Wei Hsinchu, TW 2 13

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