Method for making self aligning pillar memory cell device
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United States of America Patent
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Jul 17, 2012
Grant Date -
Jul 7, 2011
app pub date -
Mar 17, 2011
filing date -
Oct 22, 2007
priority date (Note) -
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Abstract
A method for making a memory cell assembly includes forming a memory cell access layer over a substrate to create an access device with a bottom electrode. A memory material layer is formed over the memory cell access layer in electrical contact with the bottom electrode. A first electrically conductive layer is formed over the memory material layer. A first mask, extending in a first direction, is formed over the first electrically conductive layer and then trimmed so that those portions of the first electrically conductive layer and the memory material layer not covered by the first mask are removed.
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