NAND flash memory programming

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United States of America Patent

PATENT NO 8223549
APP PUB NO 20100074021A1
SERIAL NO

12627448

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Abstract

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A programming method and memory structure for preventing punch-through in a short channel source-side select gate structure includes adjusting voltages on the selected and unselected bitlines, and the program, pass, and select gate voltages.

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Patent Owner(s)

Patent OwnerAddress
U S BANK NATIONAL ASSOCIATION AS COLLATERAL AGENT100 WALL STREET SUITE 1600 NEW YORK NY 10005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aritome, Seiichi Boise, US 291 8244
Li, Di Boise, US 99 1029
Liu, Haitao Meridian, US 376 1724

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