Method of fabricating semiconductor integrated circuit device
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United States of America Patent
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Jul 24, 2012
Grant Date -
Jul 1, 2010
app pub date -
Dec 28, 2009
filing date -
Dec 26, 2008
priority date (Note) -
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Abstract
A method of fabricating a semiconductor integrated circuit (IC) device can include forming a first silicide layer on at least a portion of a transistor on a substrate, forming nitrogen in the first silicide layer to form a second silicide layer, forming a first stress layer having a tensile stress on the substrate having the transistor formed thereon, and irradiating the first stress layer with ultraviolet (UV) light to form a second stress layer having greater tensile stress than the first stress layer.
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