Method for manufacturing semiconductor device

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United States of America Patent

PATENT NO 8227353
SERIAL NO

11893226

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Abstract

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A technique for increasing productivity by simplified steps in a manufacturing process of TFTs, electronic circuits using TFTs, and semiconductor devices formed of TFTs is provided. A method for manufacturing a semiconductor device includes forming a light absorbing layer, forming a light-transmitting layer on the light absorbing layer emitting a linear laser beam with a homogenized energy onto a mask and thereby splitting the linear laser beam into a plurality of laser beams and emitting the plurality of laser beams onto the light-transmitting layer on the light absorbing layer, and thereby forming a plurality of openings in the light-transmitting layer and the light absorbing layer.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDKANAGAWA KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Omata, Takatsugu Kanagawa, JP 28 1110
Tanaka, Koichiro Kanagawa, JP 530 12050

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