Phase change memory device suitable for high temperature operation
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United States of America Patent
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Jul 31, 2012
Grant Date -
May 19, 2011
app pub date -
Nov 16, 2009
filing date -
Nov 16, 2009
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Abstract
A phase change memory cell that includes a bottom electrode, a top electrode separated from the bottom electrode, and growth-dominated phase change material deposited between the bottom electrode and the top electrode and contacting the bottom electrode and the top electrode and surrounded by insulation material at sidewalls thereof. The phase change memory cell in a reset state only includes an amorphous phase of the growth-dominated phase change material within an active volume of the phase change memory cell.
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