Polycrystalline semiconductor layers and methods for forming the same
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United States of America Patent
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Aug 7, 2012
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N/A
app pub date -
Sep 4, 2009
filing date -
Sep 4, 2008
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Abstract
A semiconductor structure may include a polycrystalline substrate comprising a metal, the polycrystalline substrate having substantially randomly oriented grains, as well as a buffer layer disposed thereover. The buffer layer may comprise a plurality of islands having an average island spacing therebetween. A polycrystalline semiconductor layer is disposed over the buffer layer.
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