Self-aligned, embedded phase change RAM

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United States of America Patent

PATENT NO 8237140
APP PUB NO 20060284158A1
SERIAL NO

11424749

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Abstract

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An integrated circuit with an embedded memory comprises a substrate and a plurality of conductor layers arranged for interconnecting components of the integrated circuit. An intermediate layer in the plurality of conductor layers includes a first electrode having a top surface, a second electrode having a top surface, an insulating member between the first electrode and the second electrode. A bridge overlies the intermediate layer between the first and second electrodes across the insulating member, wherein the bridge comprises a programmable resistive memory material, such as a phase change material. A conductor in at least one layer in the plurality of conductor layers over said intermediate layer is connected to said bridge.

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Patent Owner(s)

  • MACRONIX INTERNATIONAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Shih Hung Elmsford, US 24 1787
Lung, Hsiang Lan Elmsford, US 118 7064

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