Amorphous boron carbide films for p-n junctions and method for fabricating same
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United States of America Patent
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Aug 7, 2012
Grant Date -
Feb 16, 2012
app pub date -
Aug 10, 2010
filing date -
Aug 10, 2010
priority date (Note) -
Expired
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Abstract
Amorphous semiconductor films with enhanced charged carrier transport are disclosed. Also disclosed is a method for fabricating and treating the film to produce the enhanced transport. Also disclosed are semiconductor p-n junctions fabricated with the films which demonstrate the enhanced transport. The films are amorphous and include boron, carbon, and hydrogen.
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