Method and device for growing pseudomorphic A1InAsSb on InAs
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United States of America Patent
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Aug 14, 2012
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N/A
app pub date -
May 11, 2011
filing date -
Jun 5, 2006
priority date (Note) -
Expired
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Abstract
A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.
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