Small pixel for image sensors with JFET and vertically integrated reset diode
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United States of America Patent
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Aug 14, 2012
Grant Date -
Nov 20, 2008
app pub date -
May 14, 2008
filing date -
May 14, 2007
priority date (Note) -
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Abstract
A pixel and a pixel array of an image sensor device of the present invention have small pixel sizes by resetting sensed charge using a diode built vertically above a substrate. The pixel and the pixel array also have low noise performance by using a JFET as a source follower transistor for sensing charge. The pixel includes a floating diffusion node configured to sense photo-generated charge, a reset diode configured to reset the floating diffusion node in response to a reset signal, and a junction field effect transistor configured to output a signal having an output voltage level corresponding to a charge level of the floating diffusion node.
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