Tunneling magnetoresistance read sensor with dual sense layers
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United States of America Patent
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Aug 14, 2012
Grant Date -
Apr 7, 2011
app pub date -
Oct 2, 2009
filing date -
Oct 2, 2009
priority date (Note) -
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Abstract
A tunneling magnetoresistance (TMR) read sensor with a Co—Fe—B lower sense layer and a Co—Hf upper sense layer is disclosed. In order for the dual sense layers to exhibit a negative saturation magnetostriction (λS), their Fe contents are either substantially reduced or even eliminated, instead of adding a conventional Ni—Fe film as an additional sense layer. By optimizing compositions and thicknesses of the dual sense layers, the dual sense layers indeed exhibit a negative λS, while the TMR sensor exhibits a TMR coefficient (ΔRT/RJ) of greater than 80% at a junction resistance-area product (RJAJ) of less than 2 Ω-μm2.
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