Single crystal silicon carbide nanowire, method of preparation thereof, and filter comprising the same
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United States of America Patent
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Aug 21, 2012
Grant Date -
Nov 25, 2010
app pub date -
Aug 16, 2007
filing date -
Aug 10, 2006
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Abstract
Single-crystal silicon carbide nanowires and a method for producing the nanowires are provided. The single-crystal silicon carbide nanowires have a very high aspect ratio and can be used for the fabrication of nanoelectronic devices, including electron gun emitters and MEMS probe tips, for use in a variety of displays and analyzers. Further provided is a filter comprising the nanowires. The filter is applied to systems for filtering vehicle engine exhaust gases to achieve improved filtering performance and increased lifetime.
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