Method for forming copper indium gallium chalcogenide layer with optimized gallium content at its surface
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United States of America Patent
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Aug 28, 2012
Grant Date -
Aug 13, 2009
app pub date -
Feb 8, 2008
filing date -
Feb 8, 2008
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Abstract
A method of forming a Group IBIIIAVIA solar cell absorber, which includes a top surface region of less than or equal to 300 nm depth. The Ga/(Ga+In) molar ratio within the top surface region is in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including at least Cu and In formed on a base, a separator layer including Se is formed on the metallic film, a metallic source layer substantially including Ga formed on the separator layer, and a cap layer substantially including Se formed on the source layer.
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