Polycrystalline silicon activation RTA

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United States of America Patent

PATENT NO 8252640
SERIAL NO

11555905

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Abstract

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A method of forming a semiconductor structure includes rapid thermal annealing of a gate stack on a semiconductor substrate at a temperature of at least 950° C., followed by forming source/drain regions in the semiconductor substrate.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES LLC198 CHAMPION COURT SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kapre, Ravindra M San Jose, US 13 83
Lakshminarayanan, Sethuraman San Jose, US 4 28

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