Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer
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United States of America Patent
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Aug 28, 2012
Grant Date -
Dec 23, 2010
app pub date -
Jun 17, 2010
filing date -
Jun 18, 2009
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of transferring a thin layer from a source substrate having a surface layer of a first material along a free surface thereof to a target substrate having at least one surface layer of a second material along a free surface thereof, where the first material differs from the second material, includes forming within the surface layer of the source substrate a weakened zone delimiting a thin layer with respect to the free surface, and assembling the free surface of the source substrate to the free surface of the target substrate in a stack of alternating layers comprising the first and second materials, so that there are, on either side of an interface formed by bringing the free surfaces into intimate contact. The cumulative thicknesses of the layers of the first material are substantially equal to the cumulative thickness of the layers of the second material, the layers having thicknesses at least equal to 50 microns and at least 1000 times the depth at which the weakened zone is formed. The thin layer is detached by applying at least partially thermal energy to fracture the weakened zone.
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