Transistors with multilayered dielectric films and methods of manufacturing such transistors
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United States of America Patent
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Aug 28, 2012
Grant Date -
Nov 24, 2011
app pub date -
Aug 2, 2011
filing date -
Oct 19, 2004
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Abstract
Transistors that include multilayered dielectric films on a channel region are provided. The multilayered dielectric comprises a lower dielectric film that may have a thickness that is at least 50% the thickness of the multilayered dielectric film and that comprises a metal oxide, a metal silicate, an aluminate, or a mixture thereof, and an upper dielectric film on the lower dielectric film, the upper dielectric film comprising a Group III metal oxide, Group III metal nitride, Group XIII metal oxide or Group XIII metal nitride. A gate electrode is provided on the multilayered dielectric film.
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