Method for forming a capacitor dielectric having tetragonal phase

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United States of America Patent

PATENT NO 8256077
SERIAL NO

12815338

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Abstract

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A method for forming a capacitor dielectric includes depositing a tantalum oxide layer over a substrate, performing a post-treatment on the tantalum oxide layer to provide the tantalum oxide layer with a tetragonal phase, and depositing a zirconium oxide layer over the tantalum oxide layer such that the zirconium oxide layer has a tetragonal phase.

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Patent Owner(s)

  • HYNIX SEMICONDUCTOR INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Park, Jong-Bum Ichon-shi, KR 30 106

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