Copper-filled trench contact for transistor performance improvement
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United States of America Patent
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Sep 4, 2012
Issued Date -
N/A
app pub date -
May 23, 2006
filing date -
Mar 30, 2006
priority date (Note) -
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Abstract
Methods of fabricating a first contact to a semiconductor device, which fundamentally comprises providing a semiconductor device formed on a substrate. The substrate further includes a conductive surface. A dielectric layer is formed over the substrate and has an opening exposing the conductive surface. The opening extends an entire length of the semiconductor device, partway down the entire length of the device, extending from the device onto adjacent field of the device, or and a combination thereof. A barrier layer is formed within the opening. A copper containing material fills the opening to form a first contact to the semiconductor device.
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