Phase change memory cell with filled sidewall memory element and method for fabricating the same
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United States of America Patent
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Sep 11, 2012
Grant Date -
Jun 9, 2011
app pub date -
Dec 27, 2010
filing date -
Feb 14, 2007
priority date (Note) -
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Abstract
Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode, a top electrode overlying the bottom electrode, a via having a sidewall extending from a bottom electrode to a top electrode, and a memory element electrically coupling the bottom electrode to the top electrode. The memory element has an outer surface contacting a dielectric sidewall spacer that is on the sidewall of the via, and comprises a stem portion on the bottom electrode and a cup portion on the stem portion. A fill material is within an interior defined by an inner surface of the cup portion of the memory element.
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