Phase change memory cell with filled sidewall memory element and method for fabricating the same

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United States of America Patent

PATENT NO 8263960
APP PUB NO 20110133150A1
SERIAL NO

12978846

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Abstract

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Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode, a top electrode overlying the bottom electrode, a via having a sidewall extending from a bottom electrode to a top electrode, and a memory element electrically coupling the bottom electrode to the top electrode. The memory element has an outer surface contacting a dielectric sidewall spacer that is on the sidewall of the via, and comprises a stem portion on the bottom electrode and a cup portion on the stem portion. A fill material is within an interior defined by an inner surface of the cup portion of the memory element.

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Patent Owner(s)

  • MACRONIX INTERNATIONAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chieh-Fang Banciao, TW 33 565
Lung, Hsiang-Lan Dobbs Ferry, US 305 9486

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