Capacitive element, method of manufacture of the same, and semiconductor device

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United States of America Patent

PATENT NO 8264063
APP PUB NO 20080315358A1
SERIAL NO

12222764

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Abstract

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A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).

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Patent Owner(s)

  • FUJITSU LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baniecki, John David Kawasaki, JP 64 528
Kurihara, Kazuaki Kawasaki, JP 168 1831
Shioga, Takeshi Kawasaki, JP 73 930

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