Photocatalytic implant having a sensor
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United States of America Patent
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Sep 18, 2012
Grant Date -
Dec 16, 2010
app pub date -
Jun 17, 2010
filing date -
Feb 6, 2004
priority date (Note) -
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Abstract
An implant comprises a photocatalytic layer on at least one surface and is adapted to act as a sensor. In some embodiments, the photocatalytic layer is a semiconductor oxide that is doped. According to some embodiments, the implant comprises a wave guide. According to some embodiments the implant comprises a light port. According to some embodiments, the implant comprises a reflective material on a surface of the waveguide. According to some embodiments the implant comprises a composite material comprising a first material that has a transmissivity when exposed to a predetermined wavelength of light and a second material that has photocatalytic activity when exposed to the predetermined wavelength of light. According to some embodiments the implant comprises a light source adapted to irradiate the photocatalytic surface.
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