Memory device
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United States of America Patent
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Sep 18, 2012
Grant Date -
Sep 10, 2009
app pub date -
Mar 7, 2008
filing date -
Mar 7, 2008
priority date (Note) -
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Abstract
A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.
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