Multilayer oxide on nitride on oxide structure and method for the manufacture of semiconductor devices
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United States of America Patent
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Sep 18, 2012
Grant Date -
Mar 17, 2011
app pub date -
Jul 28, 2010
filing date -
Sep 15, 2009
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Abstract
An integrated circuit device having a capacitor structure and methods of manufacture are disclosed. The device has a substrate, e.g., silicon wafer, silicon on insulator, epitaxial wafer. The device has a dielectric layer overlying the substrate and a polysilicon layer overlying the dielectric layer. The device has a tungsten silicide layer overlying the polysilicon layer and a first oxide layer overlying the tungsten silicide layer. A nitride layer overlies the oxide layer. A second oxide layer is overlying the nitride layer to form a sandwiched oxide on nitride on oxide structure to form a capacitor dielectric. The device also has an upper capacitor plate formed overlying the second oxide layer.
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