Method of fabricating thin film interface for internal light reflection and impurities isolation
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United States of America Patent
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Sep 25, 2012
Grant Date -
Oct 21, 2010
app pub date -
Nov 16, 2009
filing date -
Apr 16, 2009
priority date (Note) -
Expired
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Abstract
A high-quality epitaxial silicon thin layer is formed on an upgraded metallurgical grade silicon (UMG-Si) substrate. A thin film interface is fabricated between the UMG-Si substrate and the epitaxial silicon thin layer. The interface is capable of internal light reflection and impurities isolation. With the interface, photoelectrical conversion efficiency is improved. Thus, the present invention is fit to be applied for making solar cell having epitaxial silicon thin layer.
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