Chemical vapor deposition apparatus
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United States of America Patent
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Oct 2, 2012
Grant Date -
Oct 22, 2009
app pub date -
Oct 23, 2008
filing date -
Apr 18, 2008
priority date (Note) -
Expired
status (Latency Note)
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Abstract
There is provided a chemical vapor deposition apparatus improved in structure such that a reaction gas introduced into a reactor where deposition is performed flows at a substantially uniform rate to ensure a thin film is grown substantially uniformly on the deposition object. The chemical vapor deposition apparatus includes: a chamber; a reactor provided in the chamber to have a deposition object deposited therein; and a reservoir storing a reaction gas fed from the outside to introduce the reaction gas to the reactor, the reservoir having a cross-sectional area changing according to a flow path of the introduced reaction gas.
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