High uniformity boron doped diamond material

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United States of America Patent

PATENT NO 8277622
SERIAL NO

12523949

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Abstract

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The present invention relates to diamond material comprising a boron doped single crystal diamond substrate layer having a first surface and a boron doped single crystal diamond conductive layer on said first surface, wherein the distribution of boron in the conductive layer is more uniform than the distribution of boron in the substrate layer.

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Patent Owner(s)

Patent OwnerAddress
ELEMENT SIX LTDBRITAIN LONDON LONDON

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Scarsbrook, Geoffrey Alan Berkshire, GB 71 1034

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