Insulated gate type semiconductor device and method for fabricating the same
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United States of America Patent
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Oct 2, 2012
Issued Date -
N/A
app pub date -
Feb 15, 2012
filing date -
Feb 19, 2001
priority date (Note) -
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Abstract
In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.
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