Single mask adder phase change memory element
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United States of America Patent
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Oct 9, 2012
Grant Date -
Mar 3, 2011
app pub date -
Aug 28, 2009
filing date -
Aug 28, 2009
priority date (Note) -
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Abstract
A method of fabricating a phase change memory element within a semiconductor structure includes etching an opening to an upper surface of a bottom electrode, the opening being formed of a height equal to a height of a metal region at a same layer within the semiconductor structure, depositing phase change material within the opening, recessing the phase change material within the opening, and forming a top electrode on the recessed phase change material.
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