Flat lower bottom electrode for phase change memory cell
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United States of America Patent
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Oct 9, 2012
Grant Date -
Mar 3, 2011
app pub date -
Aug 28, 2009
filing date -
Aug 28, 2009
priority date (Note) -
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Abstract
A phase change memory cell having a flat lower bottom electrode and a method for fabricating the same. The method includes forming a dielectric layer over a substrate including an array of conductive contacts, patterning, a via having a low aspect ratio such that a depth of the via is less than a width thereof, to a contact surface of the substrate corresponding to each of the array of conductive contacts to be connected to access circuitry, etching the dielectric layer and depositing electrode material over the etched dielectric layer and within each via, and planarizing the electrode material to form a plurality of lower bottom electrodes on each of the conductive contacts.
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