Bulk acoustic resonator structures comprising a single material acoustic coupling layer comprising inhomogeneous acoustic property
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United States of America Patent
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Oct 9, 2012
Grant Date -
Aug 25, 2011
app pub date -
Feb 23, 2010
filing date -
Feb 23, 2010
priority date (Note) -
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Abstract
In accordance with a representative embodiment, a BAW resonator structure comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; and a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises a single-material acoustic coupling layer disposed between the first and second BAW resonators. The single-material acoustic coupling layer comprises an inhomogeneous acoustic property across a thickness of the single-material acoustic coupling layer.
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