N-type doping of zinc telluride

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United States of America Patent

PATENT NO 8288255
APP PUB NO 20120202341A1
SERIAL NO

13364415

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Abstract

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ZnTe is implanted with a first species selected from Group III and a second species selected from Group VII. This may be preformed using sequential implants, implants of the first species and second species that are at least partially simultaneous, or a molecular species comprising an atom selected from Group III and an atom selected from Group VII. The implants may be performed at an elevated temperature in one instance between 70° C. and 800° C.

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Patent Owner(s)

  • VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Godet, Ludovic Boston, US 313 2796
Lu, Xianfeng Beverly, US 21 129
Renau, Anthony West Newbury, US 89 1752

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