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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
HYNIX SEMICONDUCTOR INC	SAN 136-1 AMI-RI BUBAL-EUB ICHEON-SI KYOUNGKI-DO

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Do, Kwan-Woo	Icheon-si, KR	24	193
Kil, Deok-Sin	Icheon-si, KR	45	1007
Kim, Ja-Yong	Icheon-si, KR	2	9
Kim, Jin-Hyock	Icheon-si, KR	25	373
Kim, Young-Dae	Icheon-si, KR	64	1637
Lee, Jeong-Yeop	Icheon-si, KR	20	101
Lee, Kee-Jeung	Icheon-si, KR	64	770
Park, Kyung-Woong	Icheon-si, KR	19	112

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date
11.5 Year Payment	$7400.00	$3700.00	$1850.00	Apr 16, 2024

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge - 11.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
October 16, 2012	US,8288274,B2   US8288274B2	GRANTED PATENT AS SECOND PUBLICATION
October 22, 2009	US,20090263967,A1   US20090263967A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent No: 8288274

Method of forming noble metal layer using ozone reaction gas

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