Integrated devices on a common compound semiconductor III-V wafer
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United States of America Patent
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Oct 16, 2012
Grant Date -
Apr 7, 2011
app pub date -
Dec 9, 2010
filing date -
Jul 28, 2006
priority date (Note) -
Expired
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Abstract
A method of fabricating an integrated circuit on a compound semiconductor III-V wafer including at least two different types of active devices by providing a substrate; growing a first epitaxial structure on the substrate; growing a second epitaxial structure on the first epitaxial structure; and processing the epitaxial structures to form different types of active devices, such as HBTs and FETs.
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