Field effect transistor with metal-semiconductor junction
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United States of America Patent
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Oct 16, 2012
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app pub date -
Feb 19, 2008
filing date -
Feb 23, 2007
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Abstract
A MOSFET transistor comprising a substrate of semiconductor material having a source junction connected to a source electrode, a drain junction connected to a drain electrode, and a gate layer connected to a gate electrode, the source junction or the drain junction being a metal-semiconductor junction.
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