Methods and apparatus for wafer area pressure control in an adjustable gap plasma chamber
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United States of America Patent
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Oct 16, 2012
Grant Date -
Aug 13, 2009
app pub date -
Feb 6, 2009
filing date -
Feb 8, 2008
priority date (Note) -
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Abstract
In a plasma processing chamber, a method and an arrangement to stabilize pressure are provided. The method includes providing coarse pressure adjustments in an open-loop manner and thereafter providing fine pressure adjustments in a closed-loop manner. The coarse pressure adjustments are performed by rapidly re-position confinement rings employing an assumed linear relationship between the conductance and the confinement rings position to bring the pressure in the plasma generating region quickly to roughly a desired set point. The fine pressure adjustments are performed by at least employing mechanical vacuum pump(s), turbo pump(s), confinement ring positioning and/or combinations thereof to achieve a derive pressure set point.
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