Enhanced copper growth with ultrathin barrier layer for high performance interconnects
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 23, 2012
Grant Date -
Jan 4, 2007
app pub date -
Sep 7, 2006
filing date -
Oct 26, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully