Method for etching a molybdenum layer suitable for photomask fabrication
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United States of America Patent
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Oct 23, 2012
Grant Date -
Jul 27, 2006
app pub date -
Jan 27, 2005
filing date -
Jan 27, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Methods for fabricating a photomask are disclosed herein. In one embodiment, a method for fabricating a photomask includes providing a filmstack having a molybdenum layer and a light-shielding layer in a processing chamber, patterning a first resist layer on the light-shielding layer, etching the light-shielding layer using the first resist layer as an etch mask, and etching the molybdenum layer using the patterned light-shielding layer and the patterned first resist layer as a composite mask.
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