Lithographic mask and method of forming a lithographic mask

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United States of America Patent

PATENT NO 8293431
APP PUB NO 20100266939A1
SERIAL NO

12761876

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A lithographic mask comprises a first layer including grooves, a second layer including regions, sections and a groove-like structure that encloses the sections. The first and second layers are formed so as to reduce electrical potential differences within the second layer. A method of forming a lithographic mask includes forming first and second layers to dispose the second layer over the first layer, patterning the second layer to comprise sections, a region, and a groove-like structure enclosing the sections, and forming grooves in the first layer at portions not covered by the second layer. The first and second layers are formed to reduce potential differences within the second layers during the step of forming the grooves in the first layer.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED MASK TECHNOLOGY CENTER GMBH & CO KG01109 DRESDEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Byloos, Carla Dresden, DE 2 2
Koehle, Roderick Ottobrunn, DE 14 89
Morgana, Nicolo Dresden, DE 4 3
Moukara, Molela Munich, DE 13 104
Neubauer, Ralf Bammental, DE 3 22
Noelscher, Christoph Nuremberg, DE 29 215
Pforr, Rainer Dresden, DE 31 277
Rolff, Haiko Dresden, DE 2 18
Savignac, Dominique Ismaning, DE 58 758

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