Hybrid integrated circuit device
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United States of America Patent
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Oct 23, 2012
Grant Date -
Jun 23, 2011
app pub date -
Mar 2, 2011
filing date -
Dec 20, 2007
priority date (Note) -
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status (Latency Note)
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Abstract
An embodiment of a method to form a hybrid integrated circuit device is described. This embodiment of the method comprises: forming a first die using a first lithography, where the first die is on a substrate; and forming a second die using a second lithography, where the second die is on the first die. The first lithography used to form the first die is a larger lithography than the second lithography used to form the second die. The first die is an IO die.
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