EMS tunable transistor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 23, 2012
Grant Date -
Aug 23, 2012
app pub date -
Feb 23, 2011
filing date -
Feb 23, 2011
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A field effect transistor comprises an electrostatically moveable gate electrode. The moveable gate is supported by at least two posts, and the source, drain, and channel of the transistor are centrally located under the moveable layer. At least one electrode is positioned on at least two sides of the source, drain, and channel.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully