Non-volatile memory with improved sensing by reducing source line current
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United States of America Patent
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Oct 30, 2012
Grant Date -
May 10, 2012
app pub date -
Oct 31, 2011
filing date -
Sep 24, 2002
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Abstract
One or more sense amplifiers for sensing the conduction current of non-volatile memory is controlled by signals that are timed by a reference sense amplifier having similar characteristics and operating conditions. In one aspect, a sensing period is determined by when the reference sense amplifier sensing a reference current detects an expected state. In another aspect, an integration period for an amplified output is determined by when the reference sense amplifier outputs an expected state. When these determined timings are used to control the one or more sense amplifiers, environment and systemic variations are tracked.
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