Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation
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United States of America Patent
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Nov 13, 2012
Grant Date -
Dec 6, 2007
app pub date -
Oct 28, 2004
filing date -
Oct 28, 2003
priority date (Note) -
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Abstract
A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.
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